氧化/扩散/退火炉

适用领域：集成电路、先进封装、化合物半导体 Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors 适用材料:  Si、SiC、GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) 晶圆尺寸：12/8/6英寸 Wafer Size: 8/6 inch 适用工艺：氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、 合金(Alloy)、扩散(Diffusion) Applicable Processes: High-Temperature Annealing

LPCVD设备

适用领域：集成电路、先进封装、化合物半导体 Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors 适用材料:  Si、SiC、GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) 晶圆尺寸：12/8/6英寸 Wafer Size: 8/6 inch 适用工艺：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、 二氧化硅(TEOS)、HTO等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon(Poly-Si / U-Poly /D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition, HTO, etc.

SiC高温退火炉

♦ 适用领域：化合物半导体 Relevant Industries: Compound Semiconductors ♦适用材料：SiC Suitable for Processing: Silicon Carbide (SiC) ♦晶圆尺寸：8/6英寸 Wafer Size: 8/6 inch ♦适用工艺：高温退火(Annealing) Applicable Processes: High-Temperature Annealing Applicable process: Annealing of SiC and GaN wafers

SiC高温氧化炉

♦适用领域：化合物半导体 Relevant Industries: Compound Semiconductors ♦适用材料：SiC Suitable for Processing: Silicon Carbide (SiC) ♦晶圆尺寸：8/6英寸 Wafer Size: 8/6 inch ♦适用工艺：高温氧化(Oxidation) Applicable Processes: High-Temperature Oxidation

LPCVD设备

♦适用领域：集成电路、先进封装 Relevant Industries: Integrated Circuits, Advanced Packaging ♦适用材料：Si、SiC Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ♦晶圆尺寸：12/8/6英寸 Wafer Size: 12/8/6 inch ♦适用工艺：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、二氧化硅(TEOS)、HTO等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon (Poly-Si / U-Poly / D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition, HTO, etc.

氧化/扩散/退火炉

♦ 适用领域：  集成电路、先进封装 Relevant Industries: Integrated Circuits, Advanced Packaging ♦ 适用材料:  Si、SiC Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ♦晶圆尺寸:  12/8/6英寸 Wafer Size: 12/8/6 inch ♦适用工艺:  氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、合金(Alloy)、扩散(Diffusion) Applicable Processes:  Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion

垂直布里奇曼法（VB）炉（非铱技术）

适用领域：  单晶生长 Relevant Industries:Single Crystal Growth 适用材料:  Ga2O3、GaAs、InP等 Suitable for Processing: Ga2O3 (Gallium Oxide), GaAs (Gallium Arsenide), InP (Indium Phosphide) etc. 晶圆尺寸:  12/8/6英寸 Wafer Size: 12/8/6 inch

HVPE 法单晶生长设备 —卧式

适用领域：单晶生长、外延生长 Relevant Industries: Single Crystal Growth, Epitaxial Growth 适用材料:  GaN（单晶）、AIN（单晶/外延）、Ga2O3（外延）、GaAs（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial), GaAs (epitaxial) 晶圆尺寸:  12/8/6/4英寸 Wafer Size: 12/8/6/4 inch

HVPE 法单晶生长设备 —立式

适用领域：单晶生长、外延生长 Relevant Industries: Single Crystal Growth, Epitaxial Growth 适用材料:  GaN（单晶）、AIN（单晶/外延）、Ga2O3（外延）、GaAs（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial), GaAs (epitaxial) 晶圆尺寸:  12/8/6/4英寸 Wafer Size: 12/8/6/4 inch