ALD设备

♦适用领域：集成电路、先进封装 Relevant Industries: Integrated Circuits, Advanced Packaging ♦适用材料：Si Suitable for Processing: Silicon (Si) ♦晶圆尺寸：12/8 英寸 Wafer Size: 12/8 inch ♦适用工艺：氮化硅(SiN)、二氧化硅(SiO2)等膜层的沉积 Silicon Nitride (SiN)、 Silicon Dioxide（SiO2）, and other film layers

氧化/扩散/退火炉

♦ 适用领域：集成电路、先进封装、化合物半导体 Relevant Industries: Integrated Circuits, Advanced Packaging, Compound Semiconductors ♦ 适用材料:  Si、SiC、GaN Suitable for Processing: Silicon (Si), Silicon Carbide (SiC), Gallium Nitride (GaN) ♦ 晶圆尺寸：12/8 英寸 Wafer Size: 12/8 inch ♦ 适用工艺：氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、 合金(Alloy)、扩散(Diffusion) Applicable Processes: Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion

LPCVD设备

适用领域：集成电路、先进封装 Relevant Industries: Integrated Circuits, Advanced Packaging 适用材料:  Si Suitable for Processing: Silicon (Si) 晶圆尺寸：12/8 英寸 Wafer Size:12/8 inch 适用工艺：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、 二氧化硅(TEOS)等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon(Poly-Si / U-Poly /D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition etc.

LPCVD设备

♦适用领域：集成电路、先进封装 Relevant Industries: Integrated Circuits, Advanced Packaging ♦适用材料：Si Suitable for Processing: Silicon (Si) ♦晶圆尺寸：12/8 英寸 Wafer Size: 12/8 inch ♦适用工艺：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、二氧化硅(TEOS)、HTO等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon (Poly-Si / U-Poly / D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition, HTO, etc.

氧化/扩散/退火炉

♦ 适用领域：  集成电路、先进封装 Relevant Industries: Integrated Circuits, Advanced Packaging ♦ 适用材料:  Si Suitable for Processing: Silicon (Si) ♦晶圆尺寸:  12/8英寸 Wafer Size: 12/8 inch ♦适用工艺:  氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、合金(Alloy)、扩散(Diffusion) Applicable Processes:  Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion

HVPE 法单晶生长设备 —卧式

适用领域：单晶生长、外延生长 Relevant Industries: Single Crystal Growth, Epitaxial Growth 适用材料:  GaN（单晶）、AIN（单晶/外延）、Ga2O3（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial) 晶圆尺寸:  12/8/6 英寸 Wafer Size: 12/8/6  inch

HVPE 法单晶生长设备 —立式

适用领域：单晶生长、外延生长 Relevant Industries: Single Crystal Growth, Epitaxial Growth 适用材料:  GaN（单晶）、AIN（单晶/外延）、Ga2O3（外延） Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial) 晶圆尺寸:12/ 8/6 英寸 Wafer Size: 12/8/6 inch

PVT法长晶炉——电阻炉

适用领域：单晶生长 Relevant Industries:  Single Crystal Growth 适用材料:  SiC、AIN Suitable for Processing:  SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圆尺寸:  12/8 英寸 Wafer Size: 12/8 inch

PVT法长晶炉——感应炉

适用领域：单晶生长 Relevant Industries:  Single Crystal Growth 适用材料:  Si、AIN Suitable for Processing:  SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圆尺寸:  12/8 英寸 Wafer Size: 12/8 inch