立式炉

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立式炉

概要：

该设备是半导体生产线前工序的重要工艺设备之一，用于大规模集成电路、分立器件、电力电子、光电器件等行业的磷/硼扩散、氧化、退火、合金和烧结等工艺；主要用于初始氧化层、栅氧化层、场氧化层等多种氧化介质层的制备工艺。

关键词：

立式炉

立式炉

产品概述/Product Introduction：

♦ 该设备是半导体生产线前工序的重要工艺设备之一，用于大规模集成电路、分立器件、电力电子、光电器件等行业的氧化、扩散、退火、合金等工艺。

This equipment is one of the important process equipment in the pre production process of semiconductor production lines, used for oxidation, diffusion, annealing, alloy and other processes in industries such as large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices, etc.

♦ 氧化工艺：主要用于初始氧化层、栅氧化层、场氧化层等多种氧化介质层的制备工艺。

Oxidation process: mainly used for the preparation of various oxide dielectric layers such as initial oxide layer, gate oxide layer, field oxide layer, etc.

产品特点/Product Characteristics：

♦ 高洁净度：包括材料、工艺环境等

High cleanliness: including materials, process environment, etc

♦ 高精度：包括炉内温度、进气流量、排气压力、运动控制等

High precision: including furnace temperature, inlet flow, exhaust pressure, motion control, etc

♦ 高安全性：包括气体泄漏检测、气流检测、人机互锁等

High safety: including gas leakage detection, airflow detection, man-machine interlocking, etc

♦ 晶片尺寸：6/8/12英寸

Wafer size: 6/8/12 inch

♦ 制程温度范围：300°C-1250°C

Process temperature range: 300°C-1250°C

♦ 批次片数: 100-150片