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适用领域: 单晶生长 Relevant Industries:Single Crystal Growth 适用材料: Ga2O3、GaAs、InP等 Suitable for Processing: Ga2O3 (Gallium Oxide), GaAs (Gallium Arsenide), InP (Indium Phosphide) etc. 晶圆尺寸: 12/8/6英寸 Wafer Size: 12/8/6 inch
适用领域:单晶生长、外延生长 Relevant Industries: Single Crystal Growth, Epitaxial Growth 适用材料: GaN(单晶)、AIN(单晶/外延)、Ga2O3(外延)、GaAs(外延) Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial), GaAs (epitaxial) 晶圆尺寸: 12/8/6/4英寸 Wafer Size: 12/8/6/4 inch
适用领域:单晶生长、外延生长 Relevant Industries: Single Crystal Growth, Epitaxial Growth 适用材料: GaN(单晶)、AIN(单晶/外延)、Ga2O3(外延)、GaAs(外延) Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial), GaAs (epitaxial) 晶圆尺寸: 12/8/6/4英寸 Wafer Size: 12/8/6/4 inch
适用领域: Bonding Relevant Industries: Bonding 适用材料: SiC Suitable for Processing: SiC (Silicon Carbide) 晶圆尺寸: 12/8/6英寸 Wafer Size: 12/8/6 inch
适用领域:单晶生长 Relevant Industries: Single Crystal Growth 适用材料: SiC、AIN Suitable for Processing: SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圆尺寸: 12/8/6/4英寸,8英寸多坩埚 Wafer Size: 12/8/6/4 inch, 8 inch Multi-crucibles Provide6/8 inches process
适用领域:单晶生长 Relevant Industries: Single Crystal Growth 适用材料: Si、AIN Suitable for Processing: SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圆尺寸: 12/8/6/4英寸,8英寸多坩埚 Wafer Size: 12/8/6/4 inch, 8 inch Multi-crucibles
适用领域:单晶生长、EFG、LPE Application Fields: Single Crystal Growth, Edge-defined Film-fed Growth (EFG), Liquid Phase Epitaxy (LPE) 适用材料: SiC、Ga2O3、YAG、LYSO、LT/LN、GGG、YAP等晶体 Suitable for Processing: SiC (Silicon Carbide), Ga2O3 (Gallium Oxide), YAG (Yttrium Aluminum Garnet), LYSO (Lutetium Yttrium Orthosilicate), LT/LN (Lithium Tantalate / Lithium Niobate), GGG (Gadolinium Gallium Garnet), YAP (Yttrium Aluminum Perovskite) and other crystals 晶圆尺寸: 12/8/6/4英寸 Wafer Size: 12/8/6/4 inch
适用领域: 单晶生长、多晶热沉 Relevant Industries: Single Crystal Growth, Polycrystalline Heat Sink Fabrication 适用材料: Diamond Suitable for Processing: Diamond 晶圆尺寸: 8/6/4/3/2英寸 Wafer Size: 8/6/4/3/2 inch