山东力冠微电子装备

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垂直布里奇曼法(VB)炉(非铱技术)

适用领域:  单晶生长 Relevant Industries:Single Crystal Growth 适用材料:  Ga2O3、GaAs、InP等 Suitable for Processing: Ga2O3 (Gallium Oxide), GaAs (Gallium Arsenide), InP (Indium Phosphide) etc. 晶圆尺寸:  12/8/6英寸 Wafer Size: 12/8/6 inch

HVPE 法单晶生长设备 —卧式

适用领域:单晶生长、外延生长 Relevant Industries: Single Crystal Growth, Epitaxial Growth 适用材料:  GaN(单晶)、AIN(单晶/外延)、Ga2O3(外延)、GaAs(外延) Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial), GaAs (epitaxial) 晶圆尺寸:  12/8/6/4英寸 Wafer Size: 12/8/6/4 inch

HVPE 法单晶生长设备 —立式

适用领域:单晶生长、外延生长 Relevant Industries: Single Crystal Growth, Epitaxial Growth 适用材料:  GaN(单晶)、AIN(单晶/外延)、Ga2O3(外延)、GaAs(外延) Suitable for Processing: GaN (single crystal),AlN (single crystal / epitaxial)Ga2O3 (epitaxial), GaAs (epitaxial) 晶圆尺寸:  12/8/6/4英寸 Wafer Size: 12/8/6/4 inch

SiC籽晶粘接设备

适用领域:  Bonding Relevant Industries: Bonding 适用材料:  SiC Suitable for Processing: SiC (Silicon Carbide) 晶圆尺寸:  12/8/6英寸 Wafer Size: 12/8/6 inch

PVT法长晶炉——电阻炉

适用领域:单晶生长 Relevant Industries:  Single Crystal Growth 适用材料:  SiC、AIN Suitable for Processing:  SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圆尺寸:  12/8/6/4英寸,8英寸多坩埚 Wafer Size: 12/8/6/4 inch, 8 inch Multi-crucibles Provide6/8 inches process

PVT法长晶炉——感应炉

适用领域:单晶生长 Relevant Industries:  Single Crystal Growth 适用材料:  Si、AIN Suitable for Processing:  SiC (Silicon Carbide), AlN (Aluminum Nitride) 晶圆尺寸:  12/8/6/4英寸,8英寸多坩埚 Wafer Size: 12/8/6/4 inch, 8 inch Multi-crucibles

提拉法单晶生长设备

适用领域:单晶生长、EFG、LPE Application Fields: Single Crystal Growth, Edge-defined Film-fed Growth (EFG), Liquid Phase Epitaxy (LPE) 适用材料:  SiC、Ga2O3、YAG、LYSO、LT/LN、GGG、YAP等晶体 Suitable for Processing: SiC (Silicon Carbide), Ga2O3 (Gallium Oxide), YAG (Yttrium Aluminum Garnet), LYSO (Lutetium Yttrium Orthosilicate), LT/LN (Lithium Tantalate / Lithium Niobate), GGG (Gadolinium Gallium Garnet), YAP (Yttrium Aluminum Perovskite) and other crystals 晶圆尺寸:  12/8/6/4英寸 Wafer Size: 12/8/6/4 inch

MPCVD设备

适用领域:  单晶生长、多晶热沉 Relevant Industries: Single Crystal Growth, Polycrystalline Heat Sink Fabrication 适用材料:  Diamond Suitable for Processing: Diamond 晶圆尺寸:  8/6/4/3/2英寸 Wafer Size: 8/6/4/3/2 inch

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