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♦ 适用领域：化合物半导体 Relevant Industries: Compound Semiconductors ♦适用材料：SiC Suitable for Processing: Silicon Carbide (SiC) ♦晶圆尺寸：8/6英寸 Wafer Size: 8/6 inch ♦适用工艺：高温退火(Annealing) Applicable Processes: High-Temperature Annealing Applicable process: Annealing of SiC and GaN wafers
♦适用领域：化合物半导体 Relevant Industries: Compound Semiconductors ♦适用材料：SiC Suitable for Processing: Silicon Carbide (SiC) ♦晶圆尺寸：8/6英寸 Wafer Size: 8/6 inch ♦适用工艺：高温氧化(Oxidation) Applicable Processes: High-Temperature Oxidation
♦适用领域：集成电路、先进封装 Relevant Industries: Integrated Circuits, Advanced Packaging ♦适用材料：Si、SiC Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ♦晶圆尺寸：12/8/6英寸 Wafer Size: 12/8/6 inch ♦适用工艺：氮化硅(SiN)、多晶硅(Poly-Si/U-Poly/D-Poly)、二氧化硅(TEOS)、HTO等 Applicable Processes: Silicon Nitride (SiN) Deposition, Polysilicon (Poly-Si / U-Poly / D-Poly) Deposition, Silicon Dioxide (TEOS) Deposition, HTO, etc.
♦ 适用领域： 集成电路、先进封装 Relevant Industries: Integrated Circuits, Advanced Packaging ♦ 适用材料: Si、SiC Suitable for Processing: Silicon (Si), Silicon Carbide (SiC) ♦晶圆尺寸: 12/8/6英寸 Wafer Size: 12/8/6 inch ♦适用工艺: 氧化(Oxidation)、退火(Annealing)、固化(Polyimide)、合金(Alloy)、扩散(Diffusion) Applicable Processes: Oxidation, Annealing, Polyimide Curing, Alloy, Diffusion