产品分类
坩埚下降炉
所属分类:
GaAs / InP 单晶生长设备
概要:
本设备主要用于砷化镓(GaAs)、磷化铟(InP)等化合物晶体生长。设备由机架、安瓿支撑机构、加热器和控制系统组成,能够实现安瓿移动和转动的精确控制。
关键词:
坩埚下降长晶炉
坩埚下降炉
产品概述/Product Introduction:
本设备主要用于砷化镓(GaAs)、磷化铟(InP)等化合物晶体生长。设备由机架、安瓿支撑机构、加热器和控制系统组成,能够实现安瓿移动和转动的精确控制。
This equipmentis mainly used for crystal growth of gallium arsenide, indium phosphide and other compounds.
产品特点/Product Characteristics:
♦ 工业计算机控制系统(工业计算机控制系统,操作方便简洁)
Industrial computer control system (Industrial computer control system, easy and simple to operate)
♦ 关键部件均采用进口,确保设备的高可靠性
The key parts are imported to ensure the high reliability of the equipment
♦ 控温精度高,温区控温稳定性好
High temperature control precision and good temperature control stability in temperature zone
♦ 具有断电报警、超温、欠温报警、极限超温报警等多种安全保护功能
lt has various safety protection functions such as power failure alarm, over-temperature alarm, under-tempera-ture alarm and extreme over-temperature alarm
♦ 速度可调的梯形波、三角波及正弦波等旋转功能
Rotation functions such as trapezoidal wave, triangular wave and sine wave with adjustable speed
♦ 单晶质量高
High quality single crystal
♦ 晶片尺寸:4/6/8英寸
Nafer size: 4/6/8 inches
♦ 制程温度范围:300-2200℃
Maximum heater temperature: 2200℃
♦ 加热器最高温度2200℃
Maximum heater temperature: 2200℃
♦ 控温段数:多段控温
Number ɔf temperature control sections: multisections temperature control
♦ 炉腔压力:10MPa(最大)
Chamber pressure:10MPa(Maximum)
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