坩埚下降设备
所属分类：
第二代半导体工艺设备
概要：
◆ 主要用于4-8英寸砷化家、磷化锢等化合物单晶生长 ◆ 设备由机架、安部支撑机构、加热器和控制系统组成 ◆ 能够实现安移动和转动的精确控制
关键词：
坩埚下降炉
坩埚下降设备
产品概述/Product Introduction：
♦ 主要用于4-8英寸砷化镓、磷化铟等化合物单晶生长
Mainly used for single crystal growth of 4-8 inches of gallium arsenide, indium phosphide and other compounds
♦ 设备由机架、安瓿支撑机构、加热器和控制系统组成
The equipment consists of a rack, ampoule support mechanism, heater and control system
♦ 能够实现安瓿移动和转动的精确控制
Accurate control of ampoule movement and rotation can be realized
产品特点/Product Characteristics：
♦ 工业计算机控制系统(WINDOWS系统界面，操作方便简洁)
Industrial computer control system (WINDOWS system interface, easy and concise operation)
♦ 关键部件均采用进口,确保设备的高可靠性
The key parts are imported to ensure the high reliability of the equipment
♦ 控温精度高,温区控温稳定性好
High temperature control precision and good temperature control stability in temperature zone
♦ 具有断电报警、超温、欠温报警、极限超温报警等多种安全保护功能
lt has various safety protection functions such as power failure alarm, over-temperature alarm, under-tempera-ture alarm and extreme over-temperature alarm
♦ 速度可调的梯形波、三角波及正弦波等旋转功能
Rotation functions such as trapezoidal wave, triangular wave and sine wave with adjustable speed
♦ 单晶质量高
High quality single crystal
技术指标/Technical Indicators：
|
晶片类型:4/6英寸 Wafer type: 4/6 inches |
工作温度范围:1100℃ Operating temperature range: 1100℃ |
|
加热器最高温度:1250°C Maximum heater temperature: 1250℃ |
控温精度:土0.5℃ Temperature control accuracy: 土0.5℃ |
|
控温段数:4段 Number of temperature control sections: 4 sections |
炉腔压力:4MPa Furnace chamber pressure: 4MPa |
应用范围/Scope：
♦ 广泛用于材料的绀蜗下降的单晶生长
Bridgman-descending single crystal growth widely used in materials
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