国产半导体装备迎重大进展！山东力冠微电子装备推出12英寸液相法SiC长晶炉

新能源汽车、5G通信等产业的高速发展，推动碳化硅（SiC）衬底需求持续攀升，而大尺寸、高良率晶体生长技术成为全球半导体装备领域的核心竞争方向。
山东力冠微电子装备有限公司继8英寸液相法SiC长晶炉量产后，正加速攻关12英寸液相法SiC长晶设备，依托自主研发的工艺体系，为我国半导体装备国产化进程注入新动能。

液相法SiC长晶技术解析

 

 

 

 

相较于主流物理气相传输法（Physical Vapor Transport, PVT），顶部籽晶溶液生长( top seeded solution growth，TSSG)（最广泛采用的一种液相法）基于高温金属熔融体系溶解碳化硅前驱体，通过溶质分凝与过饱和度调控在籽晶界面定向外延生长，展现出显著的技术优势：

生长速率提升：实验室条件下，液相法生长速率通常为0.3-1.5 mm/h，较PVT法的 0.1-0.5 mm/h 提升约1.5-3倍。

能耗优化：液相法生长温度较PVT法降低 300-500℃（1500-1800℃ vs 2000-2300℃），理论能耗减少 20%-30%。

缺陷控制能力：液相法通过溶液环境抑制热应力与缺陷扩展，实验室环境下其位错密度可降至<1×10⁴ cm⁻²（部分案例<200 cm⁻²），显著优于PVT法的常规水平（>5×10⁴ cm⁻²）。

扩径潜力：液相法基于动态调控技术更易实现大尺寸晶体生长，而PVT法因气相传输对热场均匀性要求极高，扩径周期长且边缘缺陷问题突出。

p型掺杂优势：液相法低温溶液体系可精准调控铝（Al）掺杂，实现电阻率低至 0.1 Ω·cm（PVT法约2.5 Ω·cm）。

技术挑战：液相法需精准控制熔融液成分、温度梯度及籽晶界面稳定性，工艺参数耦合度高，对设备设计和工艺经验要求严苛。

山东力冠12英寸SiC液相法长晶炉核心优势 

 

 

 

大尺寸与高良率协同：设备支持12英寸SiC单晶生长，通过多温区协同控制技术，实现生长界面温度梯度高精度控制，破解晶型混杂和晶体开裂难题。

自主可控的技术体系 ：采用特殊坩埚设计与惰性气体保护系统，避免杂质污染，降低杂质残留。其自主研发的全闭环控制生长系统，可实时监控生长速率与重量等相关问题。

山东力冠的技术积累与市场验证

 

 

 

山东力冠产品涵盖第一代至第四代半导体材料工艺设备，均拥有自主知识产权，完全自主可控，产品广泛应用于集成电路、功率半导体、化合物半导体、5G芯片、光通信、MEMS等新型电子器件制造领域。
公司可为客户提供“设备制造+工艺技术服务”一体化解决方案。其关键技术打破美日垄断，实现国产化替代，生产工艺稳定性、均匀性达国际领先水平。部分拳头产品国内市占率达95%，并出口韩国、新加坡等国家。

行业价值与未来展望

 

 

 

12英寸液相法设备的推出，标志着国产半导体装备在SiC领域实现从进口替代到自主创新的关键跨越。通过技术迭代与产业链协同，山东力冠正推动国产装备向高附加值环节延伸，为第三代半导体产业的规模化应用提供核心装备支撑。

Major Breakthrough in Domestic Semiconductor Equipment! Shandong Liguan Microelectronics Equipment Co., Ltd. Launches 12-inch Liquid Phase SiC Crystal Growth Furnace

The rapid development of new energy vehicles, 5G communications and related industries has driven sustained growth in demand for silicon carbide (SiC) substrates, making large-diameter, high-yield crystal growth technology a core competitive focus in global semiconductor equipment.

Following the mass production of its 8-inch LPE method SiC crystal growth furnace, Shandong Liguan Microelectronics Equipment Co., Ltd. (hereinafter referred to as "Shandong Liguan") is now accelerating R&D on 12-inch LPE method SiC growth equipment. Leveraging its independently developed process systems, the company is injecting new momentum into China's semiconductor equipment localization efforts.

In-Depth Analysis of LPE method SiC Crystal Growth Technology

Compared to the mainstream Physical Vapor Transport method (PVT), the Top Seeded Solution Growth technique (TSSG) - the most widely adopted liquid-phase method - demonstrates remarkable technical advantages through its unique working mechanism:

Growth Rate Enhancement:
Under laboratory conditions, the liquid-phase method achieves growth rates of 0.3-1.5 mm/h, representing a 1.5-3× improvement over PVT's 0.1-0.5 mm/h range.

Energy Efficiency Optimization:
The liquid-phase process operates at 300-500°C lower temperatures (1500-1800°C vs. PVT's 2000-2300°C), theoretically reducing energy consumption by 20-30%.

Defect Control Capability:
The solution environment inherently suppresses thermal stress and defect propagation, achieving dislocation densities <1×10⁴ cm⁻² in lab conditions (exceptional cases <200 cm⁻²) - significantly superior to PVT's typical （>5×10⁴ cm⁻²）.

Diameter Scaling Potential:
Dynamic control technologies in liquid-phase growth enable easier large-diameter crystal production, whereas PVT's vapor transport mechanism

demands extreme thermal field uniformity, resulting in prolonged scaling cycles and pronounced edge defects.

p-Type Doping Advantage:
The low-temperature solution system allows precise aluminum (Al) doping control, achieving resistivities as low as 0.1 Ω·cm (vs. ~2.5 Ω·cm for PVT).

Technical Challenges:
The liquid-phase method requires exacting control of Melt composition，Temperature gradients，Seed crystal interface stability With highly coupled process parameters demanding advanced equipment design and extensive process expertise.

Key strengths of Shandong Liguan's12-inch SiC liquid-phase epitaxy (LPE) method growth furnace.

Synergy of Large Size and High Yield: The equipment supports the growth of 12-inch SiC single crystals. Through multi-temperature zone collaborative control technology, it achieves high-precision control of the temperature gradient at the growth interface, solving the problems of crystal form mixing and crystal cracking.

Self-Developed and Controllable Technology System: Special crucible design and inert gas protection system are adopted to prevent impurity contamination and reduce impurity residue. Its independently developed full closed-loop control growth system can monitor in real time issues such as growth rate and weight.

Shandong Liguan's Technological Expertise and Market Validation

Shandong Liguan's products cover the first to the fourth generation of semiconductor material process equipment, all of which have independent intellectual property rights and are fully controllable. The products are widely used in the manufacturing fields of new electronic devices such as integrated circuits, power semiconductors, compound semiconductors, 5G chips, optical communications, and MEMS.

The company can provide customers with an integrated solution of "equipment manufacturing + process technology services". Its key technologies have broken the monopoly of the United States and Japan, achieving domestic substitution, and the stability and uniformity of its production process have reached the international leading level. Some of our flagship products have a domestic market share of 95% and are exported to countries such as South Korea and Singapore.

Industry Value and Future Prospects

The launch of 12-inch liquid-phase epitaxy (LPE) method growth equipment marks a pivotal leap for domestic semiconductor tools in SiC – from import substitution to autonomous innovation. Through technological iteration and industrial chain collaboration, Shandong Liguan is advancing domestic equipment into high-value segments, providing core manufacturing support for the scaled application of third-generation semiconductors.