氮化镓（GaN）HVPE单晶生长设备 立式
所属分类：
第三代半导体工艺设备
概要：
♦ 用于氮化镓(GaN)单晶生长 ♦ 用于氧化镓(Ga₂O₃)、氮化铝(AIN)、磷化铟(InP)、砷化镓(GaAs)外延生长
关键词：
HVPE单晶生长设备 立式
氮化镓（GaN）HVPE单晶生长设备 立式
产品概述/Product Introduction：
♦ 用于氮化镓(GaN)单晶生长
Used for the growth of gllium nitride (GaN) single crystal
♦ 用于氧化镓(Ga₂O₃)、氮化铝(AIN)、磷化铟(InP)、砷化镓(GaAs)外延生长
Used for the epitaxial growth of gallium oxide (Ga₂O₃), aluminum nitride (AIN), indium. phosphide (InP) and gallium arsenide (GaAs)
产品特点/Product Characteristics：
♦ 基础工艺包
Basic process package
1.氮化镓(GaN)单晶生长尺寸: 2英寸
Gallium nitride (GaN) single crystal growth size: 2 inches
2.单晶生长速率:≥50微米/小时
Single crystal growth rate:≥50 microns/hour
3.蓝宝石衬底外延生长氮化镓(GaN)单晶层厚度: < 200微米
Thickness of gallium nitride (GaN) single crystal layer grown by epitaxial growth at the bottom of sapphire village: < 200 microns
♦ 衬底: 2/4/6英寸
Substrate size: 2/4/6 inches
♦ 数量: 1片/多片
Quantity: 1 tablet/multiple tablets
♦ 立式/卧式结构合理可靠，满足客户多种尺寸衬底，多种操作方式需要
Vertical/horizontal structure is reasonable and reliable, which can meet the needs of customers with various sizes of substrates and various operation modes
♦ 控温精度高，温区稳定性好
High temperature control precision and good stability in temperature zone
♦ 完美可靠的安全保护功能:硬件保护+软件互锁
Perfect and reliable security protection function: Hardware protection + software interlock.
下一个
上一个
PVT单晶生长设备
下一个