MPCVD设备
所属分类：
第三代半导体工艺设备
概要：
♦ 微波等离子化学气相沉积技术(MPCVD) , 通过等离子增加前驱体的反应速率,降低反应温度。适合制备面积大、均匀性好、纯度高、结晶形态好的高质量的金刚石单晶和多晶薄膜
关键词：
MPCVD
MPCVD设备
产品概述/Product Introduction：
♦ 微波等离子化学气相沉积技术(MPCVD) , 通过等离子增加前驱体的反应速率,降低反应温度。适合制备面积大、均匀性好、纯度高、结晶形态好的高质量的金刚石单晶和多晶薄膜
Microwave plasma chemical vapor deposition (MPCVD), which increases the reaction rate of precur-sors and reduces the reaction temperature by plasma. It is suitable for preparing diamond single crystal and polycrystalline films with large area, good uniformity, high purity and good crystal morphology
技术指标/Technical Indicators：
|
测温: 300-1500°C Temperature measurement: 300-1500°C |
极限真空: 5*10E-4Pa Limit vacuum: 5*10E-4Pa |
|
气路系统: 6路 Gas path system: 6 channels |
压力范围: 5-300Torr Pressure range: 5-300Torr |
|
微波功率: 0.5-15Kw连续可调 Microwave power: 0.5-15Kw continuously adjustable |
功率稳定性: <2% Power stability: < 2% |
|
波纹:≤1% Ripple:≤1% |
微波频率: 2450MHz士50MHz Microwave frequency: 2450MHz土50MHz |
|
微波泄露值: <5Mw/cm² Microwave leakage value: < 5Mw/cm² |
放电区域:≥100mm Discharge area:≥100mm |
|
沉积区域:≥80mm Sedimentation area:≥80 mm |
生长速率: >12um Growth rate: > 12um |
上一个
SiC高温氧化设备
下一个