SiC高温氧化设备
所属分类:
第三代半导体工艺设备
第一代半导体工艺设备
概要:
♦ 专门用于硅碳化合物(SiC) 的氧化处理,可实现SiC片在高温真空环境下完成高温氧化工艺。氧化工艺使用湿法氧化气体或N2O、NO、NO2,是最安全的毒性气体氧化炉 ♦ 设备适用于SiC基功率器件制造中的高温氧化工艺环节 ♦ 加热腔与工艺腔独立密闭设计,提供工艺腔的洁净度
关键词:
SiC高温氧化
SiC高温氧化设备
产品概述/Product Introduction:
♦ 专门用于硅碳化合物(SiC) 的氧化处理,可实现SiC片在高温真空环境下完成高温氧化工艺。氧化工艺使用湿法氧化气体或N₂O、NO、NO₂,是最安全的毒性气体氧化炉
Specially used for oxidation treatment of silicon-carbon compounds (SiC), which can realize the high-temperature oxidation process of SiC sheets in high-temperature vacuum environment. The oxidation process uses wet oxidation gas or N₂O, NO and NO₂, which is the safest oxidizing furnace for toxic gas.
♦ 设备适用于SiC基功率器件制造中的高温氧化工艺环节
The equipment is suitable for the high temperature oxidation process in the manufacture of SiC-based power devices
♦ 加热腔与工艺腔独立密闭设计,提供工艺腔的洁净度
The heating chamber and the process chamber are designed independently and sealed to provide the cleanliness of the process chamber
产品特点/Product Characteristics:
♦ 采用立式结构、工艺控制好、温度分布均匀、气流稳定
The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
♦ Robot自动传送(可选)
Robot Auto Transfer (Optional)
♦ 多点控温,温度均匀
Multi-point temperature control, uniform temperature
♦ 具有多种报警功能及安全保护功能
Has various alarm functions and safety protection functions
♦ 加热腔与工艺腔独立密闭设计,提供工艺腔的洁净度
The heating chamber and the process chamber are designed independently to provide the cleanliness of the process chamber
技术指标/Technical Indicators:
晶片尺寸: 4/6英寸 Wafer size: 4/6 inches |
工作温度范围: 800-1500 °C Operating temperature range: 800-1500°C |
装片量: 50/80片 Loading capacity: 50/80 tablets |
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应用范围/Scope:
♦ 用于SiC基半导体材料的高温氧化处理
Used for high temperature oxidation treatment of SiC-based semiconductor materials
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