LPCVD 立式
所属分类:
第一代半导体工艺设备
概要:
♦ LPCVD设备是半导体集成电路制造的重要设备之一, 主要用于多晶硅、氮化硅、氧化硅薄膜的生长,它是将原材料气体(或者液态源气化)用热能激活发生化学反应而在基片表面生成固体薄膜,LPCVD过程是在低压下进行的,由于气压低,气体分子平均自由程大,使生长的薄膜均匀性好,此外基片可以竖放使得设备装片量大,特别适用于工业化生产
关键词:
LPCVD (立式/卧式)
LPCVD 立式
产品概述/Product Introduction:
♦ LPCVD设备是半导体集成电路制造的重要设备之一, 主要用于多晶硅、氮化硅、氧化硅薄膜的生长,它是将原材料气体(或者液态源气化)用热能激活发生化学反应而在基片表面生成固体薄膜。LPCVD过程是在低压下进行的,由于气压低,气体分子平均自由程大,使生长的薄膜均匀性好,此外基片可以竖放使得设备装片量大,特别适用于工业化生产
LPCVD equipment is one of the important equipments for semiconductor integrated circuit manufacturing, which is mainly used for the growth of polysilicon, silicon nitride and silicon oxide thin films. It activates raw material gas (or liquid source gasification) with heat energy to generate solid thin films on the substrate surface. LPCVD process is carried out under low pressure. Because of low pressure and large average free path of gas molecules, the uniformity of the grown film is good. The substrate can be placed vertically, which makes the equipment load large, especially suitable for industrial production.
♦ 立式LPCVD采用钟罩式结构,设计嵌套腔体机械手传片组件、舟旋转组件,具有占地面积小成膜均匀性高、工艺稳定性高等优点。主要用于二氧化硅、掺杂多晶硅、氮化硅膜层的制备工艺
Vertical LPCVD adopts bell jar structure, and designs nested cavity manipulator film transmission assembly and boat rotation assembly, which has the advantages of small occupied area, high film formation uniformity and high process stability. It is mainly used for preparing silicon dioxide, doped polysilicon and silicon nitride films.
产品特点/Product Characteristics:
♦ 全自动传送,定位精准,稳定可靠
Fully automatic transmission, accurate positioning, stability and reliabilityt
♦ 高洁净度工艺环境,有效控制污染
High cleanliness process environment, effective pollution control
♦ 成膜均匀性高
High uniformity of film formation
♦ 温度控制采用串级控制方式,对基片实际温度进行实时智能控制
The temperature control adopts cascade control mode, and the real-time itelligent control of the actual temperature of the substrate is carried out
♦ 装载采用碳化硅(SiC)悬臂桨,避免了与工艺管磨擦产生粉尘
Silicon carbide (SiC) cantilever paddle is used for loading, which avoids dust generated by friction with process pipe
♦ 工作压力闭环自动控制,提高工艺稳定性和重复性
Closed loop automatic control of working pressure Improves process stabilty and repeatabllty
技术指标/Technical Indicators:
晶片类型: 6/8/12英寸晶圆 Wafer type: 6/8/12 inch wafer |
恒温区长度:≥860mm Length of constant temperature zone:≥860 mm |
工作温度范围: 500°C-1000°C Operating temperature range: 500°C- 1000°C |
控温精度: +1°C Temperature control accuracy:土1°C |
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