SiC高温退火设备
所属分类：
第三代半导体工艺设备
第一代半导体工艺设备
概要：
♦ 专门用于硅碳化合物(SiC) 的离子激活和退火处理，可实现SiC片在高温真空环境下完成活性工艺 ♦ 设备适用于SiC基功率器件制造中的离子激活和退火工艺环节 ♦ 加热腔与工艺腔独立密闭设计，提供工艺腔的洁净度
关键词：
SiC高温退火
SiC高温退火设备
产品概述/Product Introduction：
♦ 专门用于硅碳化合物(SiC) 的离子激活和退火处理，可实现SiC片在高温真空环境下完成活性工艺
It is specially used for ion activation and annealing treatment of silicon carbon compound (SiC), which can realize the active process of Sic wafer in high temperature and vacuum environment.
♦ 设备适用于SiC基功率器件制造中的离子激活和退火工艺环节
The equipment is suitable for ion activation and annealing process in the manufacture of SiC-based power devices
♦ 加热腔与工艺腔独立密闭设计，提供工艺腔的洁净度
The heating chamber and the process chamber are designed independently and sealed to provide the cleanliness of the process chamber
产品特点/Product Characteristics：
♦ 采用立式结构、工艺控制好、温度分布均匀、气流稳定
The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
♦ Robot自动传送(可选)
Robot Auto Transfer (Optional)
♦ 多点控温，温度均匀
Multi-point temperature control, uniform temperature
♦ 具有多种报警功能及安全保护功能
Has various alarm functions and safety protection functions
♦ 加热腔与工艺腔独立密闭设计，提供工艺腔的洁净度
The heating chamber and the process chamber are designed independently to provide the cleanliness of the process chamber
技术指标/Technical Indicators：
|
晶片尺寸: 4/6英寸 Wafer size: 4/6 inches |
工作温度范围: 800-2000°C Perating temperature range: 800-2000°C |
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装片量: 50/80片 Loading capacity: 50/80 tablets |
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应用范围/Scope：
♦ 用于SiC基半导体材料的离子激活和退火处理
lon activation and annealing treatment for SiC-based semiconductor materials
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