SiC高温氧化设备
所属分类:
第三代半导体工艺设备
概要:
专用于硅-碳化合物(SiC)氧化处理,可实现SiC片高温环境下完成高温氧化工艺。氧化工艺使用O2,O2/H2,N2O,NO是最安全的毒性气体氧化炉,设备适用于SiC基功率器件制造中的高温氧化工艺环节,加热腔与工艺腔独立密闭设计,提供工艺腔的洁净度。
关键词:
MPCVD
SiC高温氧化设备
产品概述/Product Introduction:
♦专用于硅-碳化合物(SiC)氧化处理,可实现SiC片高温环境下完成高温氧化工艺。氧化工艺使用O2,O2/H2,N2O,NO是最安全的毒性气体氧化炉
Specially used for oxidation treatment of silicon-carbon compounds (SiC), which can realize the high-temperature oxidaton process of SiC sheets in high-temperature environment.The oxidation process uses O2, O2/H2, N2O, NO, which is thesafest oxidizing furnace for toxic gas.
♦设备适用于SiC基功率器件制造中的高温氧化工艺环节
The equipment is suitable for the high temperature oxidation process in the manufacture of SiC-based power devices
♦加热腔与工艺腔独立密闭设计,提供工艺腔的洁净度
The heating chamber and the process chamber are designed independently and sealed to provide the cleanliness of the process chamber
技术指标/Technical Indicators:
晶片尺寸:6/8英寸 Wafer size: 6/8 inches |
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制程温度范围: 800-2000 °C Process temperature range: 800-2000°C |
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批次片数: 50-100片 Batch capacity: 50-100 pcs |
产品特点/ Product characteristics:
♦ 采用立式结构、工艺控制好、温度分布均匀、气流稳定
The vertical structure is adopted, the process is well controlled, the temperature distribution is uniform, and the airflow is stable
Robot自动传送
Robot Auto Transfer (Optional)
♦ 多点控温,温度均匀
Multi-point temperature control, uniform temperature
♦ 具有多种报警功能及安全保护功能
Has various alarm functions and safety protection functions
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氮化镓(GaN)HVPE单晶生长设备 卧式
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